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| Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features * Adoption of FBET process. * High breakdown voltage. * Good linearity of hFE and small Cob. * Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 ( ) : 2SA1209 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.2 1 2 3 15.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (-)180 (-)160 (-)5 (-)140 (-)200 1 Unit V V V mA mA W W Tc=25C 10 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob R 100 to 200 S 140 to 280 T 200 to 400 Conditions VCB=(-)80V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA VCB=(-)10V, f=1MHz Ratings min typ max (-)0.1 (-)0.1 100* 150 (4.0)3.0 400* Unit A A MHz pF *: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank hFE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5 2SA1209/2SC2911 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol VCE(sat) ton tf tstg Conditions IC=(-)50mA, IB=(-)5mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min typ 0.07 (-0.14) 0.1 0.1 1.5 max 0.3 (-0.4) Unit V s s s Switching Test Circuit IB1 IN 3k IB2 RB 2k 50 5k + 1F --2V + 1F 20V OUT IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) --140 IC -- VCE 2SA1209 . --0 6m A --0.5 mA 140 IC -- VCE mA 0.6 --120 120 0.5 mA 2SC2911 Collector Current, IC - mA Collector Current, IC - mA --100 -- A 0.4m --0.3m A 0.4mA 0.3mA 100 --80 80 --60 --0.2mA 60 0.2mA --40 --0.1mA --20 40 0.1mA 20 IB=0 0 0 --10 --20 --30 --40 --50 --60 --70 0 0 10 20 30 40 50 IB=0 60 70 Collector-to-Emitter Voltage, VCE - V --140 ITR03021 140 Collector-to-Emitter Voltage, VCE - V ITR03022 IC -- VBE 2SA1209 IC -- VBE 2SC2911 --120 120 Collector Current, IC - mA --100 Collector Current, IC - mA --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE - V --1.0 ITR03023 100 --80 80 --60 60 --40 40 --20 20 0 0 0 0 0.2 0.4 0.6 0.8 1.0 ITR03024 Base-to-Emitter Voltage, VBE - V No.779-2/5 2SA1209/2SC2911 1000 hFE -- IC 2SA1209 VCE=--5V 1000 hFE -- IC 2SC2911 VCE=5V Common Emitter DC Current Gain, hFE 5 3 2 Common Emitter DC Current Gain, hFE 7 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 2 3 5 Collector Current, IC - mA 7 --10 2 3 5 7 --100 2 ITR03025 10 5 7 1.0 2 3 5 Collector Current, IC - mA 7 10 2 3 5 7 100 2 ITR03026 3 fT -- IC Gain-Bandwidth Product, fT - MHz 2SA1209 VCE=--10V 3 2 fT -- IC 2SC2911 VCE=10V Gain-Bandwidth Product, fT - MHz 2 100 7 5 100 7 5 3 2 3 2 10 --1.0 2 3 5 7 Collector Current, IC - mA --10 2 3 5 7 --100 2 ITR03027 10 1.0 2 3 5 7 Collector Current, IC - mA 10 2 3 5 7 100 2 ITR03028 100 7 Cob -- VCB 2SA1209 f=1MHz 100 7 Cob -- VCB 2SC2911 f=1MHz Output Capacitance, Cob - pF Output Capacitance, Cob - pF 5 3 2 5 3 2 10 7 5 3 2 10 7 5 3 2 1.0 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V 2 7 --100 ITR03029 1.0 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 1.0 7 7 100 ITR03030 VCE(sat) -- IC 2SA1209 IC / IB=10 VCE(sat) -- IC 2SC2911 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE (sat) - V Collector-to-Emitter Saturation Voltage, VCE (sat) - V 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 ITR03031 --1.0 7 5 3 2 5 3 2 0.1 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03032 --0.1 7 5 3 2 Collector Current, IC - mA Collector Current, IC - mA No.779-3/5 2SA1209/2SC2911 --10 7 VBE(sat) -- IC 2SA1209 IC / IB=10 10 7 VBE(sat) -- IC 2SC2911 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE (sat) - V Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 ITR03033 5 5 3 2 3 2 --1.0 7 5 1.0 7 5 3 3 5 Collector Current, IC - mA 7 1.0 2 3 5 Collector Current, IC - mA 7 10 2 3 5 7 100 2 ITR03034 5 3 2 ASO 1.2 PC -- Ta 2SA1209 / 2SC2911 ICP=200mA IC=140mA 1s 100 7 5 3 2 10 7 5 3 2 2 Collector Dissipation, PC - W 1.0 Collector Current, IC - mA 1m s DC 0.8 op No 0.6 era he tio at n sin k 0.4 2SA1209 / 2SC2911 DC Single pulse (For PNP, minus sign is omitted.) 3 5 0.2 Collector-to-Emitter Voltage, VCE - V 12 7 10 2 3 5 7 100 2 3 5 0 0 20 40 60 80 100 120 140 160 ITR03035 Ambient Temperature, Ta - C ITR03036 PC -- Tc 2SA1209 / 2SC2911 10 Collector Dissipation, PC - W 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc - C ITR03037 No.779-4/5 2SA1209/2SC2911 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.779-5/5 |
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